Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2005-01-04
2005-01-04
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S101000, C257S102000, C257S089000, C257S090000
Reexamination Certificate
active
06838706
ABSTRACT:
In a group III nitride compound semiconductor light-emitting device, a light-emitting layer having a portion where an InGaN layer is interposed between AlGaN layers on both sides thereof is employed. By controlling the thickness, growth rate and growth temperature of InGaN layer which is a well layer and the thickness of AlGaN layer which is a barrier layer so that they are optimized, the output of the light-emitting device is enhanced.
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Asami Shinya
Ito Jun
Shibata Naoki
Watanabe Hiroshi
Dickey Thomas L
Toyoda Gosei Co,., Ltd.
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