Group III nitride LED with silicon carbide cladding layer

Details Group III nitride LED with silicon carbide cladding layer Group III nitride LED with silicon carbide cladding layer

2005-10-04

2005-10-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S201000, C257S096000, C257S103000

Reexamination Certificate

active

06952024

ABSTRACT:
A semiconductor structure for light emitting devices includes a Group III nitride active layer positioned between a silicon carbide cladding layer and a Group III nitride cladding layer, wherein the silicon carbide cladding layer and the Group III nitride cladding layer have opposite conductivity types. Moreover, the silicon carbide cladding layer and the Group III nitride cladding layer have respective bandgaps that are larger than the bandgap of the active layer.

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