Group III nitride compound semiconductor light-emitting element

Details Group III nitride compound semiconductor light-emitting element Group III nitride compound semiconductor light-emitting element

2007-07-24

2007-07-24

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S103000

Reexamination Certificate

active

10164309

ABSTRACT:
A photo-excited semiconductor layer smaller in band gap energy than a light-emitting layer made of a Group III nitride compound semiconductor is provided between a substrate and the light-emitting layer. The photo-excited semiconductor layer is excited by the light emitted from the light-emitting layer to thereby emit light at a wavelength longer than that of the light emitted from the light-emitting layer.

REFERENCES:
patent: 5644190 (1997-07-01), Potter
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5945689 (1999-08-01), Koike et al.
patent: 6288416 (2001-09-01), Koike et al.
patent: 6337035 (2002-01-01), Itoh et al.
patent: 6576933 (2003-06-01), Sugawara et al.
patent: 6998690 (2006-02-01), Nakamura et al.
patent: 08-167737 (1996-06-01), None
patent: 10-012916 (1998-01-01), None
patent: 10-022525 (1998-01-01), None
patent: 10-022527 (1998-01-01), None

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