Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-06-14
2005-06-14
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S096000, C257S097000, C257S103000
Reexamination Certificate
active
06906352
ABSTRACT:
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1; a second n-type cladding layer of AlxInyGa1−x−yN, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1−xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1−x−yN barrier layers where 0≦x≦1 and 0≦y≦1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers. In preferred embodiments, a Group III nitride superlattice supports the multiple quantum well.
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Bergmann Michael John
Doverspike Kathleen Marie
Edmond John Adam
Emerson David Todd
Kong Hua-Shuang
Crane Sara
Cree Inc.
Summa & Allan P.A.
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