Group III nitride contact structures for light emitting devices

Details Group III nitride contact structures for light emitting devices Group III nitride contact structures for light emitting devices

2006-01-17

2006-01-17

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S021000, C257S079000, C257S099000, C257S103000

Reexamination Certificate

active

06987281

ABSTRACT:
A superlattice contact structure for light emitting devices includes a plurality of contiguous p-type Group III nitride layers. The contact structure may be formed of p-type indium nitride, aluminum indium nitride, or indium gallium nitride. Also disclosed is a light emitting device that incorporates the disclosed contact structures.

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