Group III nitride semiconductor device

Details Group III nitride semiconductor device Group III nitride semiconductor device

2007-05-01

2007-05-01

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000

Reexamination Certificate

active

10771528

ABSTRACT:
A semiconductor device is formed by a first layer32composed of AlGaN, a second layer42composed of GaN, a gate electrode34, a source electrode38, and a drain electrode28. The first layer32has a region32aformed between the gate electrode34and the second layer42. A channel is formed in the vicinity of the boundary24of the first layer32and the second layer42. The second layer42has p-type conductivity and is in contact with the source electrode38.When electrons flow in the channel, the electrons collide with surrounding atoms, and holes are formed. If holes are accumulated inside the semiconductor device, the presence of the accumulated holes causes dielectric breakdown. In the semiconductor device of the invention, holes are discharged to the outside of the device thorough the second layer42and the source electrode38, and accumulation of holes can be prevented.

REFERENCES:
patent: 6933544 (2005-08-01), Saito et al.
patent: 10-223901 (1998-08-01), None

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