Group III nitride field effect transistors (FETS) capable of...

Details Group III nitride field effect transistors (FETS) capable of... Group III nitride field effect transistors (FETS) capable of...

2005-03-15

2008-12-16

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000

Reexamination Certificate

active

07465967

ABSTRACT:
Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140° C. for at least about 10 hours.

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