Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-07-04
2006-07-04
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S084000, C257S094000, C257S103000, C372S044010
Reexamination Certificate
active
07071490
ABSTRACT:
The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.
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“Export Report P-N Junction Location and Layer Conductivity in InGaN LED Chips Manufactured by _”.
“Export Report Title: Structure And Analysis Of InGaN LED Chips Manufactured By _”.
Bergmann Michael John
Doverspike Kathleen Marie
Edmond John Adam
Kong Hua-shuang
Crane Sara
Czee, Inc.
Summa, Allan & Additon, P.A.
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