Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-07-17
2007-07-17
Picardat, Kevin M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S012000, C257S014000, C438S046000, C438S047000
Reexamination Certificate
active
11063747
ABSTRACT:
In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×1019/cm3and is formed through selective growth, is formed on a p-type contact layer (second p-layer)108. And a light-transparency electrode110is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part150makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.
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Kamiya Masao
Nakajo Naoki
Taki Tetsuya
Picardat Kevin M.
Toyoda Gosei Co,., Ltd.
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