Group III nitride compound semiconductor light-emitting element

Details Group III nitride compound semiconductor light-emitting element Group III nitride compound semiconductor light-emitting element

2005-10-18

2005-10-18

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S079000, C257S099000, C257S103000, C257S615000, C257S081000, C257S098000, C257S100000

Reexamination Certificate

active

06956245

ABSTRACT:
A Group III nitride compound semiconductor light-emitting element has a reflecting surface on a side opposite to a main light-emitting surface of the element viewed from a light-emitting layer. The reflecting surface is inclined to surfaces of growth of semiconductor layers. Light emitted from the light-emitting layer is reflected by the reflecting surface, so that the reflected light emerges from side surfaces of the light-emitting element to the outside without passing through the semiconductor layers (particularly, the light-emitting layer).

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