Group III nitride semiconductor device and epitaxial substrate

Details Group III nitride semiconductor device and epitaxial substrate Group III nitride semiconductor device and epitaxial substrate

2010-11-05

2011-11-08

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S013000, C257S079000, C257S094000, C257S103000, C257SE33023, C257SE33025, C257SE33028, C257SE33030, C257SE33033, C257SE33034, C257SE33049

Reexamination Certificate

active

08053806

ABSTRACT:
A group III nitride semiconductor device having a gallium nitride based semiconductor film with an excellent surface morphology is provided. A group III nitride optical semiconductor device11aincludes a group III nitride semiconductor supporting base13, a GaN based semiconductor region15, an active layer active layer17, and a GaN semiconductor region19. The primary surface13aof the group III nitride semiconductor supporting base13is not any polar plane, and forms a finite angle with a reference plane Sc that is orthogonal to a reference axis Cx extending in the direction of a c-axis of the group III nitride semiconductor. The GaN based semiconductor region15is grown on the semipolar primary surface13a. A GaN based semiconductor layer21of the GaN based semiconductor region15is, for example, an n-type GaN based semiconductor, and the n-type GaN based semiconductor is doped with silicon. A GaN based semiconductor layer23of an oxygen concentration of 5×1016cm−3or more provides an active layer17with an excellent crystal quality, and the active layer17is grown on the primary surface of the GaN based semiconductor layer23.

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