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FET channel having a strained lattice structure along...

Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell
Reexamination Certificate

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FET circuit block with reduced self-heating

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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FET circuit block with reduced self-heating

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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FET crossbar switch device particularly useful for microwave app

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent

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Fet device with double spacer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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FET gate oxide layer with graded nitrogen concentration

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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FET gate structure and fabrication process

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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FET having a dielectrically isolated gate connect

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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FET having a gate electrode of a honeycomb structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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Fet having a reliable gate electrode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
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FET having a Si/SiGeC heterojunction channel

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate

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FET having epitaxial silicon growth

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate

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FET having gate insulating film of nonuniform thickness and asym

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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FET having gate insulating films whose thickness is different de

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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FET having minimized parasitic gate capacitance

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent

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Fet having non-overlapping field control electrode between gate

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Field relief electrode
Patent

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FET input/output pad layout

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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FET nonvolatile memory with composite gate insulating layer

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent

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FET optical receiver using backside illumination, indium materia

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent

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FET semiconductor integrated circuit device having a planar elem

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent

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