Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-10-10
2006-10-10
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S063000, C257S066000, C257S192000, C257S213000, C257S288000, C257SE21619, C257SE21634
Reexamination Certificate
active
07119369
ABSTRACT:
A field-effect transistor has a channel region in a bulk semiconductor substrate, a first source/drain region on a first side of the channel region, a second source/drain region on a second side of the channel region, and an extension of epitaxial monocrystalline material formed on the bulk semiconductor substrate so as to extend away from each side of the channel region.
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Cho Chih-Chen
Ping Er-Xuan
Wang Zhongze
Fourson George R.
Leffert Jay & Polglaze P.A.
Micro Technology Inc.
Pham Thanh V.
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