FET nonvolatile memory with composite gate insulating layer

Details FET nonvolatile memory with composite gate insulating layer FET nonvolatile memory with composite gate insulating layer

1991-12-02

1994-03-08

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257288, 257325, 257326, 257506, 257546, 257635, 257637, 257640, 257646, 257649, H01L 2978, H01L 2348, H01L 2946, H01L 2962

Patent

active

052930629

ABSTRACT:
A gate insulating layer, which is formed on a channel region of a semiconductor substrate and interposed between the semiconductor substrate and a gate electrode, consists of a first part and a second part adjoining each other. The first part includes an oxide lower layer and a nitride upper layer, and a second part includes a nitride lower layer and an oxide upper layer.

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