Active solid-state devices (e.g. – transistors – solid-state diode – Fet configuration adapted for use as static memory cell
Reexamination Certificate
2005-07-26
2005-07-26
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Fet configuration adapted for use as static memory cell
C257S903000, C257S349000
Reexamination Certificate
active
06921982
ABSTRACT:
A channel16of a FinFET10has a channel core24and a channel envelope32, each made from a semiconductor material defining a different lattice structure to exploit strained silicon properties. A gate is coupled to the channel envelope through a gate dielectric. Exemplary materials are Si and SixGe1-x, wherein 78<x<92. The channel core24has a top surface26of width wcand an upstanding surface28, 30of height hc, preferably oriented 90° to one another. The channel envelope32is in contact with the top26and upstanding surfaces28, 30so that the area of interface is increased as compared to contact only along the top surface26, improving electrical conductivity and gate18control over the channel16. The height hccan be tailored to enable a smaller scale FET10within a stabilized SRAM. Various methods of making the channel16are disclosed, including a mask and etch method, a handle wafer/carrier wafer method, and a shallow trench method. Embodiments and methods for FinFETs with one to four gates are disclosed.
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Joshi Rajiv V
Williams Richard Q
Harrington & Smith ,LLP
Karra, Esq. Satheesh K.
Nelms David
Nguyen Thinh T
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