Fet having non-overlapping field control electrode between gate

Details Fet having non-overlapping field control electrode between gate Fet having non-overlapping field control electrode between gate

1999-06-07

2000-08-08

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Field relief electrode

257260, H01L 27095

Patent

active

061005711

ABSTRACT:
A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.

REFERENCES:
patent: 4047199 (1977-09-01), Kataoka et al.
patent: 5399886 (1995-03-01), Hasegawa
patent: 5872369 (1999-02-01), Inokuchi

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