FET having gate insulating film of nonuniform thickness and asym

Details FET having gate insulating film of nonuniform thickness and asym FET having gate insulating film of nonuniform thickness and asym

1996-01-24

1998-09-01

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257491, 257413, 257655, 257408, 257336, 257344, 257496, H01L 2978

Patent

active

058014160

ABSTRACT:
A high withstand voltage transistor and a method for manufacturing the same are disclosed. The transistor includes a semiconductor substrate, a field oxide film, a channel region formed of first and second channel regions each having a different concentration level, a gate insulating film having a step difference, a gate electrode having a step difference, a drain region including first, second, and third impurity regions, a source region including first and third impurity regions, a spacer, an interlayer dielectric film and a metal electrode. Threshold voltage can be maintained to an appropriate level, junction break voltage can be increased, and the punchthrough characteristic can also be enhanced.

REFERENCES:
patent: 5061649 (1991-10-01), Takenouchi et al.
patent: 5401994 (1995-03-01), Adan
patent: 5422505 (1995-06-01), Shirai
patent: 5545575 (1996-08-01), Cheng et al.
patent: 5552623 (1996-09-01), Nishizawa et al.

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