LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant

Edge seal for integrated circuit chips

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor

Edge seal for thru-silicon-via technology

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead

Edge seal ring for copper damascene process and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge stress reduction by noncoincident layers

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge stripped BESOI wafer

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge structure and drift region for a semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Edge termination for a semiconductor component, a schottky...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Edge termination for semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – Reverse-biased pn junction guard region

Edge termination for semiconductor devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination for silicon power devices

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Edge termination for silicon power devices

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination for silicon power devices

Active solid-state devices (e.g. – transistors – solid-state diode – Avalanche diode – With means to limit area of breakdown

Edge termination for zener-clamped power device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination in a trench-gate MOSFET

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination in MOS transistors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination of semiconductor devices for high voltages...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...

Edge termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...

Edge termination structure

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Edge termination structure for power MOSFET