Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Patent
1997-05-09
1999-09-07
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
257487, 257622, H01L 2358
Patent
active
059491248
ABSTRACT:
An edge termination structure is created by forming trench structures (14) near a PN junction. The presence of the trench structures (14) extends a depletion region (13) between a doped region (12) and a body of semiconductor material or a semiconductor substrate (11) of the opposite conductivity type away from the doped region (12). This in turn forces junction breakdown to occur in the semiconductor bulk, leading to enhancement of the breakdown voltage of a semiconductor device (10). A surface of the trench structures (14) is covered with a conductive layer (16) which keeps the surface of the trench structures (14) at an equal voltage potential. This creates an equipotential surface across each of the trench structures (14) and forces the depletion region to extend laterally along the surface of semiconductor substrate (11). The conductive layers (16) are electrically isolated from an electrical contact (17) which contacts the doped region (12) and from the conductive layers (16) of neighboring trench structures (14).
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Hadizad Peyman
Salih Ali
Shen Zheng
Collopy Daniel R.
Dover Rennie William
Guay John
Motorola Inc.
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