Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2011-04-05
2011-04-05
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S276000, C257S698000, C257SE23067
Reexamination Certificate
active
07919834
ABSTRACT:
One or more multilayer back side metallurgy (BSM) stack structures are formed on thru-silicon-vias (TSV). The multiple layers of metal may include an adhesion layer of chromium on the semiconductor wafer back side, a conductive layer of copper, diffusion barrier layer of nickel and a layer of nobel metal, such as, gold. To prevent edge attack of copper after dicing, the layer of nickel is formed to seal the copper edge. To also prevent edge attack of the layer of nickel after dicing, the layer of gold is formed to seal both the layer of copper and the layer of nickel.
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Davis Robert Edgar
Edwards Robert Daniel
Hostetter, Jr. J. Edwin
Wang Ping-Chuan
Watson Kimball M.
Hu Shouxiang
International Business Machines - Corporation
Jordan John A.
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