Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-15
1997-03-25
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257396, 257398, 257341, H01L 2976, H01L 2994, H01L 31062
Patent
active
056147511
ABSTRACT:
A termination structure (located along a transistor perimeter or a die edge) for a trenched MOSFET or other semiconductor device prevents the undesirable surface channelling phenomena without the need for any additional masking steps to form a channel stop. This structure is especially applicable to P-channel MOSFETs. In the prior art a mask defines a doped channel stop. Instead here, a blanket ion implantation of P-type ions is performed after the active area masking process. Thus this doped channel stop termination is in effect masked during fabrication by the field oxide. In another version the channel stop termination is an additional trench formed in the termination region of the MOSFET. The trench is conventionally lined with oxide and filled with a conductive polysilicon field plate which extends to the edge of the die. In another version, the doped and trenched channel stops are used in combination. The channel stops are enhanced by provision of field plates overlying them on the die surface.
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Hshieh Fwu-Iuan
Yilmaz Hamza
Fahmy Wael
Klivans Norman R.
Siliconix incorporated
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