Edge termination for semiconductor device

Details Edge termination for semiconductor device Edge termination for semiconductor device

2006-05-22

2010-12-28

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S171000, C257SE29006, C257SE23033

Reexamination Certificate

active

07859076

ABSTRACT:
A semiconductor device has active region (30) and edge termination region (32) which includes a plurality of floating field regions (46). Field plates (54) extend in the edge termination region (32) inwards from contact holes (56) towards the active region (30) over a plurality of floating field regions (46). Pillars (40) may be provided.

REFERENCES:
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patent: WO2004/001854 (2003-12-01), None
Dalla Betta, Gian-Franco; et al “A Novel Silicon Microstrip Termination Structure with all P-Type Multiguard and Scribe-line Implants” IEEE Transactions on Nuclear Science, vol. 49, No. 4, Aug. 2002, pp. 1712-1716.
Jayant, Baliga B. “Power Semiconductor Devices” John Wiley & Sons, Inc. 1987, pp. 99-100 (Figure 3.7).

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