Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1991-11-12
1993-11-30
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257494, H01L 2104, H01L 2360
Patent
active
052668312
ABSTRACT:
A semiconductor structure having an edge termination feature wherein at least one guard ring is disposed in a substrate between a main device portion and the edge of the substrate. A dielectric layer is then disposed on the substrate and a plurality of diodes are disposed on the dielectric layer above the at least one guard ring. The at least one guard ring and the diodes are electrically coupled so that the potential of the guard rings may be fixed by the diodes and leakage is greatly reduced.
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patent: 5028548 (1991-07-01), Nguyen
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Phipps John P.
Robb Stephen P.
Hille Rolf
Motorola Inc.
Williams Alexander Oscar
Wolin Harry A.
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