Edge seal for integrated circuit chips

Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant

Reexamination Certificate

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C257SE23125, C257SE23131, C257SE23133, C257SE23126, C257S723000, C257S789000, C257S685000, C257S787000, C257S642000

Reexamination Certificate

active

07098544

ABSTRACT:
A structure for a chip or chip package is disclosed, with final passivation and terminal metallurgy which are mechanically decoupled but electrically coupled to the multilayer on-chip interconnects. This decoupling allows the chip to survive packaging stresses in the final passivation region, with strain relief from the decoupling region and compliant leads therein, so that on-chip interconnect levels do not feel these external packaging or other stresses. This structure is particularly preferred for on-chip interconnects consisting of Cu and low-k dielectric, the latter having inferior mechanical properties relative to SiO2. The decoupled region extends over all chips on the wafer. It may also extend into the edgeseal or dicing channel region so as to allow chip dicing and retention of this mechanical decoupling all around every chip on the wafer.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano et al.
patent: 4017340 (1977-04-01), Yerman
patent: 4331970 (1982-05-01), Yerman
patent: 5008213 (1991-04-01), Kolesar, Jr.
patent: 5198963 (1993-03-01), Gupta et al.
patent: 5287003 (1994-02-01), Van Andel et al.
patent: 5310965 (1994-05-01), Senba et al.
patent: 5665655 (1997-09-01), White
patent: 5679977 (1997-10-01), Khandros et al.
patent: 5739585 (1998-04-01), Akram et al.
patent: 5742094 (1998-04-01), Ting
patent: 5786632 (1998-07-01), Farnworth et al.
patent: 6191492 (2001-02-01), Yamazaki et al.
patent: 6271578 (2001-08-01), Mitwalsky et al.
patent: 6368899 (2002-04-01), Featherby et al.
patent: 6372527 (2002-04-01), Khandros et al.
patent: 6383893 (2002-05-01), Begle et al.
patent: 6538214 (2003-03-01), Khandros
patent: 6552426 (2003-04-01), Ishio et al.
patent: 6583516 (2003-06-01), Hashimoto
patent: 6882045 (2005-04-01), Massingill et al.
patent: 2002/0127776 (2002-09-01), Nakajo et al.
patent: 2003/0122220 (2003-07-01), West et al.
patent: 2003/0137062 (2003-07-01), Akram et al.
patent: 2003/0222330 (2003-12-01), Sun et al.
patent: 2004/0008947 (2004-01-01), Yamabayashi et al.
patent: 2004/0063237 (2004-04-01), Yun et al.
patent: 2004/0088855 (2004-05-01), Akram
patent: 2004/0102022 (2004-05-01), Jiang et al.
patent: 59-72745 (1984-04-01), None
patent: 5-335482 (1993-12-01), None
H. A. Reed et al., “Compliant Wafer Level Package (CWLP) With Embedded Air-Gaps For Sea of Leads (SoL) Interconnections,” Proc. of IEEE 2001 International Interconnect Technology Conference, pp. 151-153.
M.S. Bakir et al., “Sea of Leads Microwave Characterization and Process Integration with FEOL and BEOL,” Proc. of IEEE 2002 International Interconnect Technology Conference, pp. 116-118.
A. Mule et al., “Optical Waveguides With Embedded Air-Gap Cladding Integrated Within a Sea-of-Leads (SoL) Wafer-Level Package,” Proc. of IEEE 2002 International Interconnect Technology Conference, pp. 122-124.
“Chip Pad Process” IBM Technical Disclosure bulletin, Oct. 1991.
“Via Reliability Problem Eliminated by an Offset Elliptical Via,” IBM Technical Disclosure Bulletin, Jan. 1998, pp. 310-311.
“Structure for the Passivation of Semiconductor Chips,” IBM Technical Disclosure Bulletin, Aug. 1973, p. 728.

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