Edge termination in MOS transistors

Details Edge termination in MOS transistors Edge termination in MOS transistors

2005-08-30

2005-08-30

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

06936890

ABSTRACT:
A RESURF trench gate MOSFET has a sufficiently small pitch (close spacing of neighbouring trenches) that intermediate areas of the drain drift region are depleted in the blocking condition of the MOSFET. However, premature breakdown can still occur in this known device structure at the perimeter/edge of the active device area and/or adjacent the gate bondpad. To counter premature breakdown, the invention adopts two principles:the gate bondpad is either connected to an underlying stripe trench network surrounded by active cells, or is directly on top of the active cells, anda compatible 2D edge termination scheme is provided around the RESURF active device area.These principles can be implemented in various cellular layouts e.g. a concentric annular device geometry, which may be circular or rectangular or ellipsoidal, in the active area and in the edge termination, or a device array of such concentric hexagonal or circular stripe cells, or a device array of square active cells with stripe edge cells, or a device array of hexagonal active cells with an edge termination of hexagonal edge cells.

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