LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Borderless contact structure

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

Borderless contact structures

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Borderless contact to diffusion with respect to gate...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Borderless gate structures

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Borderless vias

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Borderless vias on bottom metal

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Borderless vias with CVD barrier layer

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Borderless vias with HSQ gap filled metal patterns having high e

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Borderless vias with HSQ gap filled patterned metal layers

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Borderless wordline for DRAM cell

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Boride electrodes and barriers for cell dielectrics

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Boride electrodes and barriers for cell dielectrics

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Boron aluminum nitride diamond heterostructure

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Boron carbide particle detectors

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Boron doped silicon capacitor plate

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...

Boron etch-stop layer and methods related thereto

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Boron implanted dielectric structure

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Boron incorporated diffusion barrier material

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Boron incorporated diffusion barrier material