Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...
Reexamination Certificate
2006-10-26
2009-08-04
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
C257S616000, C257S655000, C257SE21232, C438S758000, C438S740000, C438S752000
Reexamination Certificate
active
07569913
ABSTRACT:
A method for forming an etch-stop layer and a resulting structure fabricated therefrom. The etch-stop layer has a semiconductor layer having a first surface and a boron layer formed below the first surface of the semiconductor layer. The boron layer has a full-width half-maximum (FWHM) thickness value of less than 100 nanometers. The boron layer is formed by a chemical vapor deposition (CVD) system.
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Atmel Corporation
Mandala Victor A
Schwegman Lundberg & Woessner, P.A.
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