Boron implanted dielectric structure

Details Boron implanted dielectric structure Boron implanted dielectric structure

1999-02-04

2000-08-01

Clark, Sheila V.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257650, 257632, H01L 2358

Patent

active

060970790

ABSTRACT:
An interlevel dielectric and a method for making same wherein boron is introduced into the dielectric though an implantation process. During the implantation process, either the boron-10 or the boron-11 boron isotope may be selected and introduced into the dielectric. Boron is introduced to make the dielectric flow at lower temperatures. Selectively implanting boron-10 or boron-11 during implantation, as opposed to buying boron comprising a specific boron isotope from a supplier and introducing boron during CVD, lowers the production costs. Furthermore, introducing boron into the dielectric during the implantation process as opposed to during deposition of the dielectric during a CVD process, the dielectric layer is free of "boron" bumps. Boron-bearing dielectrics can be made to made to flow at lower temperatures than dielectrics which do not contain boron. Furthermore, boron-11 can be introduced exclusively into the dielectric during the implantation process to eliminate soft errors caused by the formation of alpha particles. Boron-10 is a major source of alpha particles formed in a nuclear reaction between boron-10 and cosmic ray neutrons.

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Wolf, Stanley, "Silicon Processing For The VLSI Era vol. 1:Process Technology," Lattice Press, pp. 187-191, 308-311.

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