Borderless vias with CVD barrier layer

Details Borderless vias with CVD barrier layer Borderless vias with CVD barrier layer

1997-09-05

1999-10-19

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257750, 257751, 257763, 257764, H01L 2348, H01L 2352, H01L 2940

Patent

active

059694254

ABSTRACT:
Borderless vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an undercut, etched side surface of a lower metal feature. A metal, such as tungsten, is subsequently deposited to fill the borderless via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H.sub.2 /N.sub.2 plasma to lower its resistivity.

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