Borderless contact structures

Details Borderless contact structures Borderless contact structures

2007-06-19

2007-06-19

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S774000, C257S249000, C257S365000, C257S401000

Reexamination Certificate

active

11375624

ABSTRACT:
A borderless contact structure and method of fabricating the structure, the method including: (a) providing a substrate; (b) forming a polysilicon line on the substrate, the polysilicon line having sidewalls; (c) forming an insulating sidewall layer on the sidewalls of the polysilicon line; (d) removing a portion of the polysilicon line and a corresponding portion of the insulating sidewall layer in a contact region of the polysilicon line; and (e) forming a silicide layer on the sidewall of the polysilicon line in the contact region. Also an SRAM cell using the borderless contact structure and a method of fabricating the SRAM cell.

REFERENCES:
patent: 5621232 (1997-04-01), Ohno
patent: 6066534 (2000-05-01), Son
patent: 6153510 (2000-11-01), Ishibashi
patent: 6207514 (2001-03-01), Furukawa et al.
patent: 6261924 (2001-07-01), Mandelman et al.
patent: 6333220 (2001-12-01), Mandelman et al.
patent: 6335279 (2002-01-01), Jung et al.
patent: 6403423 (2002-06-01), Weybright et al.
patent: 6512299 (2003-01-01), Noda
patent: 6531724 (2003-03-01), Furukawa et al.
patent: 2002/0111025 (2002-08-01), Weybright et al.
patent: 2003/0228752 (2003-12-01), Strane et al.
IBM Confidential; Self-Aligned Borderless Contacts; Strane, et al.; 4 pages.

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