Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2011-06-28
2011-06-28
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S012000, C257S183000, C257S183100, C257S189000, C257S192000, C257S200000, C257S201000, C257SE29188, C257SE29246, C257SE29252, C257SE21407, C257SE21403, C257S077000, C257S194000, C257SE29248, C257SE29249
Reexamination Certificate
active
07968865
ABSTRACT:
A heterostructure having a heterojunction comprising: a diamond layer; and a boron aluminum nitride (B(x)Al(1-x)N) layer disposed in contact with a surface of the diamond layer, where x is between 0 and 1.
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Bernstein Steven D.
Hoke William E.
Korenstein Ralph
LaRoche Jeffrey R.
Daly, Crowley & Mofford & Durkee, LLP
Lopez Fei Fei Yeung
Raytheon Company
Tran Minh-Loan T
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