Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-17
2000-08-29
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, H01L 2976, H01L 3300
Patent
active
061112852
ABSTRACT:
Titanium boride (TiB.sub.x), zirconium boride (ZrB.sub.x) and hafnium boride (HfB.sub.x) barriers and electrodes for cell dielectrics for integrated circuits, particularly for DRAM cell capacitors. The barriers protect cell dielectrics from diffusion and other interaction with surrounding materials during subsequent thermal processing.
REFERENCES:
patent: 3634736 (1972-01-01), Boos et al.
patent: 5142438 (1992-08-01), Reinberg et al.
patent: 5172307 (1992-12-01), Tabuchi et al.
patent: 5362632 (1994-11-01), Mathews
patent: 5406447 (1995-04-01), Miyazaki
patent: 5504041 (1996-04-01), Summerfelt
patent: 5567964 (1996-10-01), Kashihara et al.
patent: 5568352 (1996-10-01), Hwang
patent: 5585300 (1996-12-01), Summerfelt
patent: 5663088 (1997-09-01), Sandhu et al.
patent: 5665628 (1997-09-01), Summerfelt
patent: 5679980 (1997-10-01), Summerfelt
patent: 5686339 (1997-11-01), Lee et al.
patent: 5688724 (1997-11-01), Yoon et al.
patent: 5690727 (1997-11-01), Azuma et al.
patent: 5696018 (1997-12-01), Summerfelt et al.
patent: 5696040 (1997-12-01), Jarrold et al.
Shappirio et al., "Diboride Diffusion Barriers in Silicon and GaAs Technology", J. Vac. Sci. Technol. B, vol. 4, No. 6, Nov./Dec. 1986.
Hideaki Matsuhashi et al., "Optimum Electrode Materials for Ta.sub.2 O.sub.5 Capacitors at High and Low Temperature Processes," Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 853-855.
K. W. Kwon et al., "Degradation-Free Ta.sub.2 O.sub.5 Capacitor After BPSG Reflow at 850.degree. C for High Density DRAMSs", Advanced Technology Center, Samsung Electronics Co. 1993, pp. 3.5.1 to 3.5.3.
Al-Shareef Husam N.
DeBoer Scott J.
Gealy Dan
Thakur Randhir P. S.
Meier Stephen D.
Micro)n Technology, Inc.
LandOfFree
Boride electrodes and barriers for cell dielectrics does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Boride electrodes and barriers for cell dielectrics, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boride electrodes and barriers for cell dielectrics will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1252632