Borderless contact structure

Details Borderless contact structure Borderless contact structure

1998-09-30

2000-06-06

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257698, 257760, 438634, H01K 2304

Patent

active

060722371

ABSTRACT:
A method for forming a borderless, contact or via hole, has been developed, in which a thin silicon nitride layer is used as an etch stop to prevent attack of an underlying interlevel dielectric layer, during the opening of the borderless, contact or via hole, in an overlying, interlevel dielectric layer. The thin silicon nitride layer is the top layer of an interlevel dielectric composite layer, used between metal interconnect levels.

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patent: 5736770 (1998-04-01), Asai et al.
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patent: 5858877 (1999-01-01), Dennison et al.
patent: 5880519 (1999-03-01), Bothra et al.
patent: 5895975 (1999-04-01), Lin

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