Borderless vias with HSQ gap filled metal patterns having high e

Details Borderless vias with HSQ gap filled metal patterns having high e Borderless vias with HSQ gap filled metal patterns having high e

1997-12-18

1999-08-24

Dutton, Brian

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

H01L 2348, H01L 2352, H01L 2940

Patent

active

059428015

ABSTRACT:
Spacings between metal features are gap filled with HSQ. Portions of the deposited HSQ adjoining the side surfaces and upper surface of a metal feature are selectively heated to increase the density and etch resistance of the adjoining HSQ portions, thereby enabling formation of reliable, voidless, low resistance, borderless vias. In an embodiment of the present invention, selective heating is effected by heating a metal line to indirectly heat the adjoining portions of the HSQ layer, as by infrared heating.

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