LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Thin active physical layer which is

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Ultrahigh density patterning of conducting media

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Ultraviolet group III-nitride-based quantum well laser diodes

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Ultraviolet light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Unipolar light emitting devices based on III-nitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Unipolar three-terminal resonant-tunneling transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Universal quantum dot logic cell

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Use of sack geometry to implement a single qubit phase gate

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is

Using unstable nitrides to form semiconductor structures

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Vacuum device for controlling spatial position and path of elect

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Vacuum field transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Vacuum microdevice

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Vacuum transistor having an optical gate

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission

Vacuum-sealed field-emission electron source and method of manuf

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

Variable capacitor single-electron device

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Variable capacitor single-electron transistor including a...