Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-03-30
1995-11-21
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313427, 313308, 315 35, H01L 2906
Patent
active
054689724
ABSTRACT:
A vacuum chamber is provided with an electron emission source on a first side wall, a collector on a second side wall opposite to the first side, and an insulated electrode on a bottom wall. Electrons emitted from the electron emission source move over the insulated electrode to be collected by the collector, so that the spatial position and the path of the electrons on the insulated electrode are controlled dependent on an electric potential generated by the insulated electrode.
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Bowers Courtney A.
Crane Sara W.
NEC Corporation
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