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Ultra-linear multi-channel field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate

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Ultra-linear multi-channel field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Ultra-small semiconductor devices having patterned edge planar s

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Ultrafast optical switching device having a double-junction mult

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Ultrahigh density patterning of conducting media

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Ultraviolet group III-nitride-based quantum well laser diodes

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Ultraviolet light emitting diode

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Unipolar light emitting devices based on III-nitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
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Unipolar three-terminal resonant-tunneling transistor

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Universal gates for ising TQFT via time-tilted interferometry

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Universal quantum dot logic cell

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent

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Use of sack geometry to implement a single qubit phase gate

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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Using unstable nitrides to form semiconductor structures

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
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