Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1997-11-10
1999-06-01
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
445 24, 438 20, 3151691, 313309, 313336, H01L 2906
Patent
active
059090332
ABSTRACT:
A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
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patent: 5532177 (1996-07-01), Cathey
patent: 5695378 (1997-12-01), Hecker, Jr. et al.
patent: 5760470 (1998-06-01), Stansbury
Koga Keisuke
Morita Kiyoyuki
Chaudhuri Olik
Matsushita Electric - Industrial Co., Ltd.
Wille Douglas A.
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