Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-12-11
2009-11-17
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S025000, C257S027000, C257SE29168
Reexamination Certificate
active
07619241
ABSTRACT:
The present invention provides a single-electron transistor device100. The device comprises a source105and drain110located over a substrate115and a quantum island120situated between the source and drain, to form tunnel junctions125, 130between the source and drain. The device further includes a fixed-gate electrode135located adjacent the quantum island120. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device300, and a transistor circuit800that include a single-electron device810.
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Brady III Wade J.
Patti John J.
Pizarro Marcos D.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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