Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2007-01-23
2007-01-23
Mai, Anh D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257SE29322, C257SE21404, C257SE39013
Reexamination Certificate
active
10960239
ABSTRACT:
The present invention provides a single-electron transistor device100. The device comprises a source105and drain110located over a substrate115and a quantum island120situated between the source and drain, to form tunnel junctions125, 130between the source and drain. The device further includes a fixed-gate electrode135located adjacent the quantum island120. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device300, and a transistor circuit800that include a single-electron device810.
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Dae Hwan Kim; Suk-Kang Sung; Kyung Rok Kim; Jong Duk Lee; Byung-Gook Park; Bum Ho Choi; Sung Woo Hwang; Doyeol Ahn; “Silicon single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic”, Electron Devices, IEEE Transactions on, vol. 49, Issue 4, Apr. 2002 pp. 627-635.
Brady III W. James
Kunzer Brian E.
Mai Anh D.
McLarty Peter K.
Telecky , Jr. Frederick J.
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