Ultrafast optical switching device having a double-junction mult

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

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257 22, 257 21, 257 85, 257184, 359245, 359248, H01L 2714, H01L 3100

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active

054480809

ABSTRACT:
Disclosed is an ultrafast optical switching device having two types of multiple quantum well structures to be connected with each other, the device comprising a semi-insulating substrate; and a first and a second multiple quantum well structure formed sequentially on the substrate and united with each other to produce a double-junction multiple quantum well structure. Each of the multiple quantum well structures has nonlinear optical effects and two life time constants present while switching off in the device. One of the life time constants corresponds to a short life time constant to be determined dependent on electrons in the double-junction multiple quantum well structure and the other of the life time constants corresponds to a long life time constant to be determined dependent on holes and lattices therein. The multiple quantum well structures are formed in such a manner that short life time constants thereof may be in-phase with each other and long life time constants thereof may be out-of-phase to each other. The multiple quantum well structures are formed differently from each other in composition.

REFERENCES:
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patent: 5324959 (1994-06-01), Nakamura et al.
patent: 5329136 (1994-07-01), Goosen
A. Mysyrowicz et al-"`Dressed Excitons` in a Multiple-Quantum-Well Structure: Evidence for an Optical Stark Effect With . . . "; Physical Review Letters., vol. 56, No. 25, Jun. 23, 1986, pp. 2748-2751.
J. Feldman et al-"Ultrafast Optical Nonlinearities of Type II Al.sub.x Ga.sub.1-x As/AlAs Multiple Quantum Wells", Appl. Phys. Lett., vol. 57, No. 15, 8 Oct. 1990, pp. 1520-1522.

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