Using unstable nitrides to form semiconductor structures

Details Using unstable nitrides to form semiconductor structures Using unstable nitrides to form semiconductor structures

2011-07-19

2011-07-19

Kebede, Brook (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S043000, C257SE29245, C257SE23161, C977S762000

Reexamination Certificate

active

07982204

ABSTRACT:
Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.

REFERENCES:
patent: 4897287 (1990-01-01), Berger et al.
patent: 2006/0099758 (2006-05-01), Zhang et al.
patent: 2006/0269729 (2006-11-01), Gan et al.

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