Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1997-03-27
1998-11-10
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313309, 313310, 438 20, H01L 2906
Patent
active
058347909
ABSTRACT:
A vacuum microdevice having a field-emission cold cathode includes a first electrode having a projection portion formed on its surface, the projection having a sharp tip, an insulating film formed in the region of the first electrode, excluding the sharp tip of the projection portion, a second electrode formed in a region on the insulating film, excluding the sharp tip of the projection portion, to planarize the surface of the second electrode, and a structural substrate bonded to the lower surface of the first electrode and having a recess portion in the bonding surface with the lower surface of the first electrode, the recess portion having a size large enough to cover a recess reflecting the sharp tip of the projection portion formed on the lower surface of the first electrode. The interior of the recess portion formed in the structural substrate communicates with the atmosphere outside the device. A support structure is formed on the surface of the second electrode to surround each projection portion formed on the first electrode. With this structure, a vacuum microdevice which can suppress variations in characteristics due to voids, and exhibit excellent long-term reliability can be provided.
REFERENCES:
patent: 4307507 (1981-12-01), Gray et al.
patent: 5394006 (1995-02-01), Liu
patent: 5499938 (1996-03-01), Nakamoto
patent: 5572041 (1996-11-01), Betsui et al.
patent: 5580827 (1996-12-01), Akamine
Chaudhuri Olik
NEC Corporation
Wille Douglas A.
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