Universal quantum dot logic cell

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257 14, 257 25, 257270, H01L 2906

Patent

active

057838402

ABSTRACT:
A quantum dot logic unit (8) is provided which comprises a row of quantum dots (14, 16, and 18), with each quantum dot separated by vertical heterojunction tunneling barriers (20, 22, 24, and 26). Electric potentials placed on inputs (32, 34, and 36) are operable to modulate quantum states within the quantum dots, thus controlling electron tunneling through the tunneling barriers.

REFERENCES:
patent: 4575924 (1986-03-01), Reed et al.
patent: 4758870 (1988-07-01), Hase et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 5346851 (1994-09-01), Randall et al.
patent: 5347140 (1994-09-01), Hirai et al.
patent: 5408106 (1995-04-01), Seabaugh
patent: 5440148 (1995-08-01), Nomoto
Gary Frazier, Technology and Applications Roadmap for Nanoelectronics, Technology and Applications Roadmap, pp. 219-222 no month.
Broekaert et al., AIAs Etch-Stop Layers for InGaAIAs/InP Heterostructure Devices and Circuits, 1990 IEEE, IEDM 90, pp. 339-342. no month.
Broekaert et al., Extremely High Current Density, Low Peak Voltage, Pseudomorphic IN.sub.0.53 Ga.sub.0.47 As/AIAs/InAs Resonant Tunneling Diodes, 1989 IEEE, pp. 559-562 no month.
Broekaert et al., Pseudomorphic In.sub.0.53 GA.sub.0.47 As/AIAs/InAs Resonant Tunneling Diodes with Peak-to-Valley Current Ratios of 30 at Room Temperature, Appl. Phys. Letter 53(16), 17 Oct. 88, pp. 1545-1547.
Chou et al., Lateral Resonant Tunneling Transistors Employing Field-Induced Quantum Wells and Barriers, Proceedings of the IEEE, vol. 79, No. 8, Aug. 91, pp. 1131-1139.
Huang et al., Analysis of n-Channel MOS-Controlled Thyristors, IEEE Transactions on Electron Devices, vol. 38, No. 7, Jul. 91, pp. 1612-1618.
Ide et al., Sidewall Growth by Atomic Layer Epitaxy, Appl. Phys. Letter 53(23), 5 Dec. 88, pp. 2314-2316.
Seabaugh et al., Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor, IEEE Transactions on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2327-2334.
Seabaugh et al., Quantum-Well Resonant-Tunneling Transistors, Twelth Bienniel Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Aug. 89.
Seabaugh et al., Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector, Japanese Journal of Applied Physics, vol. 30, No. 5, May 91, pp. 921-925.
Yamamato et al., Buried Rectangular GaInAs/InP corrugations of 70 nm Pitch Fabricated by OMVPE, Apr. 90.
Yang et al., New Field-Effect Resonant Tunneling Transistor: Observation of Oscillatory Transconductance, Appl. Phys. Letter 55(26), 25 Dec. 89, pp. 2742-2744.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Universal quantum dot logic cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Universal quantum dot logic cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Universal quantum dot logic cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1649083

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.