Ultrahigh density patterning of conducting media

Details Ultrahigh density patterning of conducting media Ultrahigh density patterning of conducting media

2011-08-16

2011-08-16

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

C257S024000, C257SE27071, C257SE51023

Reexamination Certificate

active

07999248

ABSTRACT:
A nanoscale device and a method for creating and erasing of nanoscale conducting regions at the interface between two insulating oxides SrTiO3and LaAlO3is provided. The method uses the tip of a conducting atomic force microscope to locally and reversibly switch between conducting and insulating states. This allows ultra-high density patterning of quasi zero or one dimensional electron gas conductive regions, such as nanowires and conducting quantum dots respectively. The patterned structures are stable at room temperature after removal of the external electric field.

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