Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is
Reexamination Certificate
2009-08-28
2011-12-13
Sandvik, Benjamin (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
C257S030000
Reexamination Certificate
active
08076666
ABSTRACT:
An implementation of a single qubit phase gate for use in a quantum information processing scheme based on the υ=5/2 fractional quantum Hall (FQH) state is disclosed. Using sack geometry, a qubit consisting of two σ-quasiparticles. which may be isolated on respective antidots, may be separated by a constriction from the bulk of a two-dimensional electron gas in the υ=5/2 FQH state. An edge quasiparticle may induce a phase gate on the qubit. The number of quasiparticles that are allowed to traverse the edge path defines which gate is induced. For example, if a certain number of quasiparticles are allowed to traverse the path, then a π/8 gate may be effected.
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Bonderson Parsa
Clarke David
Nayak Chetan
Shtengel Kirill
Condo Roccia LLP
Microsoft Corporation
Sandvik Benjamin
Schoenholtz Joseph
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