Ultraviolet group III-nitride-based quantum well laser diodes

Details Ultraviolet group III-nitride-based quantum well laser diodes Ultraviolet group III-nitride-based quantum well laser diodes

2006-11-21

2006-11-21

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S103000

Reexamination Certificate

active

07138648

ABSTRACT:
A pair of undoped spacer layers are provided adjacent to, or near to, a single quantum well aluminum gallium nitride active region. In various exemplary embodiments, the undoped spacer layers are provided between the single quantum well aluminum gallium nitride active region and carrier confinement layers. The undoped spacer layers reduce the threshold current for the laser device and improve the output characteristics.

REFERENCES:
patent: 5006908 (1991-04-01), Matsuoka et al.
patent: 6072819 (2000-06-01), Shakuda
patent: 6118801 (2000-09-01), Ishikawa et al.
patent: 6121634 (2000-09-01), Saito et al.
patent: 6389051 (2002-05-01), Van de Walle et al.
patent: 6597017 (2003-07-01), Seko et al.
patent: 2003/0132440 (2003-07-01), Oku et al.
patent: 0 908 988 (1999-04-01), None
patent: 0 908 988 (1999-04-01), None
patent: 908988 (1999-04-01), None
patent: 1 022 825 (2000-07-01), None

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