Anodically bonded ultra-high-vacuum cell
Boron etch-stop layer and methods related thereto
Buffer structure for modifying a silicon substrate
Buffer structure for modifying a silicon substrate
Bulk nitride mono-crystal including substrate for epitaxy
Bulk nitride mono-crystal including substrate for epitaxy
Bulk nitride mono-crystal including substrate for epitaxy
Chalcogenide-based electrokinetic memory element and method...
CMOS devices with balanced drive currents based on SiGe
Co-sputter deposition of metal-doped chalcogenides
Combined binary oxide semiconductor device
Complementary metal oxide semiconductor integrated circuit...
Composite material substrate
Compound semiconductor device including AIN layer of...
Compound semiconductor device, production method thereof,...
Deposited semiconductor structure to minimize n-type dopant...
Deposited semiconductor structure to minimize n-type dopant...
Design and fabrication of 6.1-Å family semiconductor...
Directionally controlled growth of nanowhiskers
Dislocation removal from a group III-V film grown on a...