Buffer structure for modifying a silicon substrate

Details Buffer structure for modifying a silicon substrate Buffer structure for modifying a silicon substrate

2008-01-29

2008-01-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Reexamination Certificate

active

10545911

ABSTRACT:
A buffer structure comprising a compositionally graded layer of a nitride alloy comprising two or more Group IIIB elements, for example La, Y, Sc or Ac, is used to modify a silicon substrate to produce a universal substrate on which a range of target materials, for example GaN, may be deposited to produce semiconductor devices for electronic and optical applications. The resulting lattice parameter L varies with thickness T through the structure.

REFERENCES:
patent: 5998232 (1999-12-01), Maruska
patent: 6171898 (2001-01-01), Crenshaw et al.
patent: 6472694 (2002-10-01), Wilson et al.
patent: 2002/0031851 (2002-03-01), Linthicum et al.
patent: 2002/0187356 (2002-12-01), Linthicum et al.
patent: 2003/0017683 (2003-01-01), Emrick et al.
patent: 50-102581 (1975-08-01), None
patent: 95/17019 (1995-06-01), None
patent: 99/18617 (1999-04-01), None
GB Search Report for 0303784.3 dated Jul. 31, 2003.
International Search Report for PCT/GB2004/000560 dated Sep. 1, 2004.
Liu et al.,Substrates for gallium nitride epitaxy, Materials Science and Engineering R 37, 2002, pp. 61-127.
Perjeru et al.,ScN/GaN heterojunctions: fabrication and characterization, Applied Surface Science, vols. 175-176, May 15, 2001, pp. 490-494.
Kaplan et al.,Growth and properties of scanidum epitaxial films on GaN, Appl. Phys. Lett., vol. 68, No. 23, Jun. 3, 1996, pp. 3248-3250.

Affiliated with

Also associated with

Rating

Buffer structure for modifying a silicon substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Buffer structure for modifying a silicon substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Buffer structure for modifying a silicon substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3916702