Buffer structure for modifying a silicon substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or...

Reexamination Certificate

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Reexamination Certificate

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10545911

ABSTRACT:
A buffer structure comprising a compositionally graded layer of a nitride alloy comprising two or more Group IIIB elements, for example La, Y, Sc or Ac, is used to modify a silicon substrate to produce a universal substrate on which a range of target materials, for example GaN, may be deposited to produce semiconductor devices for electronic and optical applications. The resulting lattice parameter L varies with thickness T through the structure.

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