Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound
Reexamination Certificate
2009-08-31
2011-11-15
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Group iii-v compound
C257SE29090
Reexamination Certificate
active
08058705
ABSTRACT:
A composite material substrate having patterned structure includes a substrate, a first dielectric layer, a second dielectric layer, and a nitride semiconductor material. Herein, the first dielectric layer is stacked on the substrate, the second dielectric layer is stacked on the first dielectric layer, and the nitride semiconductor material is stacked on the second dielectric layer and is characterized by a plurality of patterns thereon.
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Guo Yih-Der
Lai Chih-Ming
Liu Po-Chun
Liu Wen-Yueh
Tsay Jenq-Dar
Industrial Technology Research Institute
Jianq Chyun IP Office
Thomas Toniae
Wilczewski Mary
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